?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 8
1
Publication Order Number:
RB521S30T1/D
RB521S30T1G,
NSVRB521S30T1G,
RB521S30T5G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high?speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand?held and portable
applications where space is limited.
Features
?
Extremely Fast Switching Speed
?
Extremely Low Forward Voltage 0.5 V (max) @ IF
= 200 mA
?
Low Reverse Current
?
AEC Qualified and PPAP Capable
?
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Vdc
Forward Current DC
IF
200
mA
Peak Forward Surge Current (Note 1)
IFSM
1.0
A
ESD Rating: Class 1C per Human Body Model
ESD Rating: Class C per Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 60 Hz for 1 cycle.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board,
(Note 2)
TA
= 25
?C
Derate above 25?C
PD
200
1.57
mW
mW/?C
Thermal Resistance,
Junction?to?Ambient
RJA
635
?C/W
Junction and Storage Temperature
Range
TJ, Tstg
?55 to +125
?C
2. FR?5 Minimum Pad.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
30 V SCHOTTKY
BARRIER DIODE
Device Package Shipping?
ORDERING INFORMATION
RB521S30T1G SOD?523
(Pb?Free)
3,000/Tape & Reel
4 mm Pitch
1
CATHODE
2
ANODE
RB521S30T5G SOD?523
(Pb?Free)
8,000/Tape & Reel
2 mm Pitch
http://onsemi.com
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOD?523
CASE 502
MARKING DIAGRAM
5M M
12
5M = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
NSVRB521S30T1G SOD?523
(Pb?Free)
3,000/Tape & Reel3,000/Tape & Reel
4 mm Pitch4 mm Pitch
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相关代理商/技术参数
RB521S30T1/D 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode
RB521S30T1_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode
RB521S30T1G 功能描述:肖特基二极管与整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
RB521S30T5 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode
RB521S30T5G 功能描述:肖特基二极管与整流器 SCHOTTKY DIODE RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
RB521S30TE61 制造商:ROHM Semiconductor 功能描述:
RB521S-30TE61 功能描述:肖特基二极管与整流器 SCHOTTKY 30V 200MA RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
RB521S-30-TP 功能描述:肖特基二极管与整流器 30V 1A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel